Advances in III-Nitride Materials, Devices, and Applications

III-nitride semiconductors have become key to advances in solid-state lighting, power electronics, and RF devices, thanks to their high radiative efficiency, tunable direct bandgap, and excellent material properties. Despite the maturity of InGaN blue LEDs, GaN-based red and UV LEDs still suffer from low external quantum efficiency, limiting their potential in new applications like micro-LED displays and sterilization. While GaN-based HEMTs have achieved impressive breakdown voltages in the lab, most devices in the field operate below 650 V. Additionally, realizing high-performance p-channel GaN FETs remains a challenge because of complex materials issues, and the development of N-polar GaN is hindered by defects. Growth on various substrates is actively explored, but further progress is needed.This Research Topic aims to showcase recent progress and identify challenges in III-nitride materials and device research. We seek contributions on fundamental material growth, device fabrication, and application-driven development. Ultimately, we hope to highlight strategies to overcome current performance bottlenecks and accelerate the adoption of advanced III-nitride technologies.The focus is on innovations in III-nitride materials, new device architectures, and their application in lighting and electronics. We welcome articles on, but not limited to, the following themes:• Growth techniques for III-nitrides• Mechanisms affecting growth and device performance• Novel III-nitride device structures• Material, optical, and electronic characterization• InGaN long-wavelength LEDs• GaN-based UV LEDs• Micro-LED display technologies• GaN-based lasers• GaN HEMTs for power and RF applications Topic editors: Yangfeng Li, Chunyu Zhao, Zhen Deng, Weijun Luo, Yang Jiang Source: https://www.frontiersin.org/research-topics/83672/advances-in-iii-nitride-materials-devices-and-applications