Advancing ferroelectric and two-dimensional materials for next-generation electronic devices

The field of next-generation electronics is being transformed by the convergence of ferroelectric materials and two-dimensional (2D) semiconductors. Ferroelectrics, with their intrinsic polarization-switching capability, have rekindled interest for enabling low-power operation and non-volatile computing, while atomically thin 2D materials deliver outstanding control over electrostatic properties and tunable electronic behavior. Recent years have witnessed significant progress, including the demonstration of ferroelectric field-effect transistors (FeFETs), integration with oxide and silicon-based platforms, and the realization of steep-slope and multifunctional electronic architectures. However, despite such advancements, critical gaps persist. The community continues to debate the underlying polarization dynamics, interface effects, and phenomena like charge trapping, which directly impact device variability and long-term stability under operational stress. Moreover, dominant theories and experimental findings often differ on the scaling behavior and reliability of these hybrid systems, highlighting the need for deeper investigation and comprehensive modeling across scales.This Research Topic aims to unite contributions focused on the fundamental physics, advanced modeling, and innovative applications of electronic devices leveraging ferroelectric and 2D materials. The primary goal is to clarify the interplay between material properties, device operation, and circuit performance, and to stimulate new solutions to key unresolved questions—such as the mechanisms of switching, origins of device variability, and scalable integration with mainstream semiconductor technologies. By bridging theoretical, computational, and experimental perspectives, we seek to reveal actionable insights that advance both the understanding and performance of ferroelectric and 2D material-based electronics. Specific objectives include elucidating polarization and transport mechanisms, improving predictive modeling, and catalyzing device-to-system innovation for next-generation computing and memory applications.To ensure a focused yet inclusive exploration, this Research Topic covers original research and perspectives on ferroelectric and 2D semiconductor-based electronics, with emphasis on device operation, materials integration, and reliability challenges. We welcome submissions addressing, but not limited to, the following themes:Fundamentals and device physics of FeFETs and negative-capacitance devicesIntegration strategies for ferroelectric materials with CMOS, oxide, and 2D semiconductor platformsCharge transport, switching phenomena, and defect/interface engineering in 2D channelsDevice reliability, variability, and long-term operational stabilityAdvanced modeling: TCAD, compact models, and machine learning-assisted approaches for multiscale simulationDevice-to-circuit co-design and applications in memory, logic, and neuromorphic computingEmerging concepts for steep-slope devices and energy-efficient architectures Topic editors: Li Yiming, Ying-Tsan Ethan Tang, NARASIMHULU THOTI Source: https://www.frontiersin.org/research-topics/80135/advancing-ferroelectric-and-two-dimensional-materials-for-next-generation-electronic-devices