ElectronicsPublished 12 August 2025Exploring the performance of GaN trench CAVETs from cryogenic to elevated temperaturesX. Wen · K. Lee · H. Kasai · M. Noshin · C. Meng · S. ChowdhuryFrontiers in Electronicsdoi 10.3389/felec.2025.1613402
Electronic MaterialsPublished 9 July 20252DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effectV. Stanishev · I. Streicher · A. Papamichail · V. Rindert · P. P. Paskov · S. Leone · V. DarakchievaFrontiers in Electronic Materialsdoi 10.3389/femat.2025.1622176
