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Published 9 July 2025
2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect
V. Stanishev · I. Streicher · A. Papamichail · V. Rindert · P. P. Paskov · S. Leone · V. Darakchieva
Frontiers in Electronic Materials
doi 10.3389/femat.2025.1622176